Our “ALTERPHASIC” method is different from existing ones. The monocrystalline SiC film is grown not from above, but from inside the silicon substrate. The essence of this approach is based on the preliminary introduction of point defects into the crystal lattice of the silicon matrix, from which the frame of the future film will be assembled. The defects are the carbon atoms introduced into the interstitial positions of silicon and a vacancies formed as a result of the removal of the silicon atoms. This enables growth of very thin layer of cubic or (optionally) hexagonal silicon carbide.

 

Alterphasic SiC/Si templates

Alterphasic templates can be grown on standard Si wafers of p- and n-type.

Diameter - 2, 3, 4, 6 inch

Further diameter scale up is ONLY limited with size of currently used reactor chamber and Si substrates diameters available. The films are uniform across the whole surface.

 

Alterphasic wafer 3C-SiC/Si specification

 

2.2 Epitaxial heterostructures

- Thick (up to hundreds of microns) and high-quality layers of III-V semiconductor materials can be grown on Alterphasic SiC-on-Si wafers.

- Thin SiC monocrystalline layers are not destroyed with the grown nitride heterostructures (such as AlN and GaN) but elastically compressed fully adapting to the lattice of these crystals. Thus almost defect-free nitride layers are obtained on one SiC layer immediately without buffering 8-12 layers of solid AlGaN solution.

-Grown III-V structures are easy to get etched off thanks to porous layer formed inside Si substrate.