About R&D team
The R&D team consists of 14 scientists having doctoral and candidate degree. We have been working on the project in collaboration with many universities research groups for 9 years. Over 170 research papers were published in scientific journals since 2013. 9 technology related patents are obtained.
Lab capabilities
- Theoretical and practical research of crystal growth process
- Reactor flows and chemical reactions modeling during crystal synthesis
- Crystal growth process simulation
- Semiconductor compound modeling by quantum chemistry means
- Growth parameters calculations based on needed structures and desired properties
- Research of second order phase transition processes
Key research area
- Monocrystalline nanoscale SiC grow on Si by self-assembly method
- Heterostructures growth on the proprietary SiC/Si epiwafers
