Providing Alternative

The well-established task of the semiconductor industry is "Smaller, Faster and Cheaper." Improving performance with simultaneous size and cost reduction is a mainstream trend for the design of any semiconductor device. For the power semiconductor devices, these requirements primarily mean providing lowest switching and dielectric conductivity losses, a higher switching frequency, the characteristics stability over a wide temperature range, high operating temperature and as high blocking voltage as possible. While silicon power components are about to reach the theoretical limits, the semiconductor-based devices with a wide band gap, high thermal conductivity, and breakdown field strength become widely demanded. These are silicon carbide (SiC) and gallium nitride (GaN). Two of the main factors limiting the widespread use of these materials are the high cost and dispiriting density of miscellaneous defects of the substrates.

The team of our company has developed a technology of templates production (Alterphasic), as the basis for the further growth of a wide range of high-quality WBG materials on it. At the same time, the technology allows one to decrease the cost drastically vs existing growth processes of SiC, SiC-on-Si and GaN-on-Si

One substrate

Dozens of applications
The team of our company has developed a technology of templates production (Alterphasic), as the basis for the further growth of a wide range of high-quality WBG materials on it. At the same time, the technology allows one to decrease the cost drastically vs existing growth processes of SiC, SiC-on-Si and GaN-on-Si.